时钟发生器是一款多路输出、超低附加抖动、可编程时钟发生器

石英晶体(Crystal)

表晶（KHZ）

石英晶体（MHZ）

热敏晶体（TSX）

车规级晶体(AECQ Crystal)

石英晶振(Oscillator)

CMOS晶振(CMOS XO)

差分晶振(Differential XO)

超低抖动(Ultra Low Jitter XO)

超低功耗(Ultra low power-XO)

宽温晶振（Wide Temp. XO）

车规级晶振(AEC-Q200 XO)

可编程晶振(Programmable)

CMOS可编程（CMOS XO）

I2C可编程差分晶振（ I2C DXO）

差分晶振（Differential XO）

可编程压控晶振（VCXO）

可编程(压控)温补 VC-TCXO

可编程展频晶振（SSXO）

压控晶振(VCXO)

CMOS压控晶振(CMOS VCXO)

差分压控(Differential VCXO)

温补晶振(TCXO)

差分温补(Differential TCXO)

高精度温补(High Precision TCXO)

超低噪声温补(Ultra Low Noise TCXO)

压控温补晶振(VCTCXO)

压控温补(CMOS VCTCXO)

差分压控温补(VCTCXO）

恒温晶振(OCXO)

超低噪声OCXO

超高稳OCXO

小型化OCXO

国产化OCXO

RTC

Real Time Clock (实时时钟)

时钟缓冲器 / 时钟发生器

差分时钟缓冲器(Clock Buffer)

单端时钟缓冲器(Clock Buffer)

时钟发生器(Clock Generator)

型号	温度稳定度	温度范围	波形	秒稳	相噪TyP	封装(mm)	频率范围	规格书
SYKB23F04	LVPECL LVDS LP-HCSL LVCMOS	4 Diff+ 1 SE	4 Diff+ 1 SE	4 Diff+ 1 SE	4 Diff+ 1 SE	4 Diff+ 1 SE	1.8V~3.3V	-40°C~+85°C	样品申请
SYKB23F04G	LVPECL LVDS LP-HCSL LVCMOS	4 Diff+ 1 SE	4 Diff+ 1 SE	4 Diff+ 1 SE	4 Diff+ 1 SE	4 Diff+ 1 SE	1.8V~3.3V	-40°C~+85°C	样品申请
SYKB23H04	LP-HCSL LVCMOS	4 Diff+ 1 SE	4 Diff+ 1 SE	4 Diff+ 1 SE	4 Diff+ 1 SE	4 Diff+ 1 SE	1.8V~3.3V	-40°C~+85°C	样品申请
SYKB23H04G	LP-HCSL LVCMOS	4 Diff+ 1 SE	4 Diff+ 1 SE	4 Diff+ 1 SE	4 Diff+ 1 SE	4 Diff+ 1 SE	1.8V~3.3V	-40°C~+85°C	样品申请
SYKB22M05	LVPECL LVDS LP-HCSL LVCMOS	2 Diff+ 3 SE	2 Diff+ 3 SE	2 Diff+ 3 SE	2 Diff+ 3 SE	2 Diff+ 3 SE	Core/Diff:1.8~3.3V SE:1.5~3.3V	-40°C~+85°C	样品申请
SYKB22M05G	LVPECL LVDS LP-HCSL LVCMOS	2 Diff+ 3 SE	2 Diff+ 3 SE	2 Diff+ 3 SE	2 Diff+ 3 SE	2 Diff+ 3 SE	Core/Diff:1.8~3.3V SE:1.5~3.3V	-40°C~+85°C	样品申请
SYKB23F06	LVPECL LVDS LP-HCSL LVCMOS	6 Diff+1 SE	6 Diff+1 SE	6 Diff+1 SE	6 Diff+1 SE	6 Diff+1 SE	1.8V~3.3V	-40°C~+85°C	样品申请
SYKB23F06G	LVPECL LVDS LP-HCSL LVCMOS	6 Diff+1 SE	6 Diff+1 SE	6 Diff+1 SE	6 Diff+1 SE	6 Diff+1 SE	1.8V~3.3V	-40°C~+85°C	样品申请
SYKB23F08	LVPECL LVDS LP-HCSL LVCMOS	8 Diff+ 1 SE	8 Diff+ 1 SE	8 Diff+ 1 SE	8 Diff+ 1 SE	8 Diff+ 1 SE	1.8V~3.3V	-40°C~+85°C	样品申请
SYKB23F08G	LVPECL LVDS LP-HCSL LVCMOS	8 Diff+ 1 SE	8 Diff+ 1 SE	8 Diff+ 1 SE	8 Diff+ 1 SE	8 Diff+ 1 SE	1.8V~3.3V	-40°C~+85°C	样品申请
SYKB23H08	LP-HCSL LVCMOS	8 Diff+ 1 SE	8 Diff+ 1 SE	8 Diff+ 1 SE	8 Diff+ 1 SE	8 Diff+ 1 SE	1.8V~3.3V	-40°C~+85°C	样品申请
SYKB23H08G	LP-HCSL LVCMOS	8 Diff+ 1 SE	8 Diff+ 1 SE	8 Diff+ 1 SE	8 Diff+ 1 SE	8 Diff+ 1 SE	1.8V~3.3V	-40°C~+85°C	样品申请
SYKB23F10	LVPECL LVDS LP-HCSL LVCMOS	10 Diff+ 1 SE	10 Diff+ 1 SE	10 Diff+ 1 SE	10 Diff+ 1 SE	10 Diff+ 1 SE	1.8V~3.3V	-40°C~+85°C	样品申请
SYKB23F10G	LVPECL LVDS LP-HCSL LVCMOS	10 Diff+ 1 SE	10 Diff+ 1 SE	10 Diff+ 1 SE	10 Diff+ 1 SE	10 Diff+ 1 SE	1.8V~3.3V	-40°C~+85°C	样品申请

产品图片

型号

温度稳定度

温度范围

波形

秒稳

相噪TyP

封装(mm)

频率范围

规格书

样品申请

SYKB23F04

LVPECL
LVDS
LP-HCSL
LVCMOS

4 Diff+ 1 SE

1.8V~3.3V

-40°C~+85°C

样品申请

SYKB23F04G

LVPECL
LVDS
LP-HCSL
LVCMOS

4 Diff+ 1 SE

1.8V~3.3V

-40°C~+85°C

样品申请

SYKB23H04

LP-HCSL
LVCMOS

4 Diff+ 1 SE

1.8V~3.3V

-40°C~+85°C

样品申请

SYKB23H04G

LP-HCSL
LVCMOS

4 Diff+ 1 SE

1.8V~3.3V

-40°C~+85°C

样品申请

SYKB22M05

LVPECL
LVDS
LP-HCSL
LVCMOS

2 Diff+ 3 SE

Core/Diff:1.8~3.3V
SE:1.5~3.3V

-40°C~+85°C

样品申请

SYKB22M05G

LVPECL
LVDS
LP-HCSL
LVCMOS

2 Diff+ 3 SE

Core/Diff:1.8~3.3V
SE:1.5~3.3V

-40°C~+85°C

样品申请

SYKB23F06

LVPECL
LVDS
LP-HCSL
LVCMOS

6 Diff+1 SE

1.8V~3.3V

-40°C~+85°C

样品申请

SYKB23F06G

LVPECL
LVDS
LP-HCSL
LVCMOS

6 Diff+1 SE

1.8V~3.3V

-40°C~+85°C

样品申请

SYKB23F08

LVPECL
LVDS
LP-HCSL
LVCMOS

8 Diff+ 1 SE

1.8V~3.3V

-40°C~+85°C

样品申请

SYKB23F08G

LVPECL
LVDS
LP-HCSL
LVCMOS

8 Diff+ 1 SE

1.8V~3.3V

-40°C~+85°C

样品申请

SYKB23H08

LP-HCSL
LVCMOS

8 Diff+ 1 SE

1.8V~3.3V

-40°C~+85°C

样品申请

SYKB23H08G

LP-HCSL
LVCMOS

8 Diff+ 1 SE

1.8V~3.3V

-40°C~+85°C

样品申请

SYKB23F10

LVPECL
LVDS
LP-HCSL
LVCMOS

10 Diff+ 1 SE

1.8V~3.3V

-40°C~+85°C

样品申请

SYKB23F10G

LVPECL
LVDS
LP-HCSL
LVCMOS

10 Diff+ 1 SE

1.8V~3.3V

-40°C~+85°C

样品申请

型号	温度稳定度	温度范围	波形	秒稳	相噪TyP	封装(mm)	频率范围	规格书
SYKB13C10	LVCMOS	10 SE(1 Bank)	10 SE(1 Bank)	10 SE(1 Bank)	10 SE(1 Bank)	10 SE(1 Bank)	Core:1.8V~3.3V Out:1.5V~3.3V	-40°C~+85°C	样品申请
SYKB13C10G	LVCMOS	10 SE(1 Bank)	10 SE(1 Bank)	10 SE(1 Bank)	10 SE(1 Bank)	10 SE(1 Bank)	Core:1.8V~3.3V Out:1.5V~3.3V	-40°C~+85°C	样品申请
SYKB22C05	LVCMOS	5 SE(2 Banks)	5 SE(2 Banks)	5 SE(2 Banks)	5 SE(2 Banks)	5 SE(2 Banks)	Core:1.8V~3.3V Out:1.5V~3.3V	-40°C~+85°C	样品申请
SYKB22C05G	LVCMOS	5 SE(2 Banks)	5 SE(2 Banks)	5 SE(2 Banks)	5 SE(2 Banks)	5 SE(2 Banks)	Core:1.8V~3.3V Out:1.5V~3.3V	-40°C~+85°C	样品申请
SYKB23C10	LVCMOS	10 SE(2 Banks)	10 SE(2 Banks)	10 SE(2 Banks)	10 SE(2 Banks)	10 SE(2 Banks)	Core:1.8V~3.3V Out:1.5V~3.3V	-40°C~+85°C	样品申请
SYKB23C10G	LVCMOS	10 SE(2 Banks)	10 SE(2 Banks)	10 SE(2 Banks)	10 SE(2 Banks)	10 SE(2 Banks)	Core:1.8V~3.3V Out:1.5V~3.3V	-40°C~+85°C	样品申请

产品图片

型号

温度稳定度

温度范围

波形

秒稳

相噪TyP

封装(mm)

频率范围

规格书

样品申请

SYKB13C10

LVCMOS

10 SE(1 Bank)

Core:1.8V~3.3V
Out:1.5V~3.3V

-40°C~+85°C

样品申请

SYKB13C10G

LVCMOS

10 SE(1 Bank)

Core:1.8V~3.3V
Out:1.5V~3.3V

-40°C~+85°C

样品申请

SYKB22C05

LVCMOS

5 SE(2 Banks)

Core:1.8V~3.3V
Out:1.5V~3.3V

-40°C~+85°C

样品申请

SYKB22C05G

LVCMOS

5 SE(2 Banks)

Core:1.8V~3.3V
Out:1.5V~3.3V

-40°C~+85°C

样品申请

SYKB23C10

LVCMOS

10 SE(2 Banks)

Core:1.8V~3.3V
Out:1.5V~3.3V

-40°C~+85°C

样品申请

SYKB23C10G

LVCMOS

10 SE(2 Banks)

Core:1.8V~3.3V
Out:1.5V~3.3V

-40°C~+85°C

样品申请

型号	温度稳定度	温度范围	波形	秒稳	相噪TyP	封装(mm)	频率范围	规格书
SYKG6965	Diff.(LVPECL/LVDS/HCSL)&LVCMOS	4pairs(4Diffor8SE)+1LVCMOS	4pairs(4Diffor8SE)+1LVCMOS	4pairs(4Diffor8SE)+1LVCMOS	4pairs(4Diffor8SE)+1LVCMOS	4pairs(4Diffor8SE)+1LVCMOS	1.8V~3.3V	-40°C~+85°C	样品申请
SYKG1011E	Diff. (LP-HCSL/LVDS/HCSL) & LVCMOS	1 diff pair +1 LVCMOS	1 diff pair +1 LVCMOS	1 diff pair +1 LVCMOS	1 diff pair +1 LVCMOS	1 diff pair +1 LVCMOS	1.8V~3.3V	-40°C~+85°C	样品申请
SYKG1011Q5	Diff. (LP-HCSL/LVDS/HCSL) & LVCMOS	1 diff pair +1 LVCMOS	1 diff pair +1 LVCMOS	1 diff pair +1 LVCMOS	1 diff pair +1 LVCMOS	1 diff pair +1 LVCMOS	1.8V~3.3V	-40°C~+85°C	样品申请
SYKG1021E	Diff. (LP-HCSL/LVDS/HCSL) & LVCMOS	2 diff pairs + 1 LVCMOS	2 diff pairs + 1 LVCMOS	2 diff pairs + 1 LVCMOS	2 diff pairs + 1 LVCMOS	2 diff pairs + 1 LVCMOS	1.8V~3.3V	-40°C~+85°C	样品申请
SYKG1021Q5	Diff. (LP-HCSL/LVDS/HCSL) & LVCMOS	2 diff pairs + 1 LVCMOS	2 diff pairs + 1 LVCMOS	2 diff pairs + 1 LVCMOS	2 diff pairs + 1 LVCMOS	2 diff pairs + 1 LVCMOS	1.8V~3.3V	-40°C~+85°C	样品申请
SYKG1042E	Diff. (LP-HCSL/LVDS/HCSL) & LVCMOS	4 diff pairs + 2 LVCMOS	4 diff pairs + 2 LVCMOS	4 diff pairs + 2 LVCMOS	4 diff pairs + 2 LVCMOS	4 diff pairs + 2 LVCMOS	1.8V~3.3V	-40°C~+85°C	样品申请
SYKG1042Q5	Diff. (LP-HCSL/LVDS/HCSL) & LVCMOS	4 diff pairs + 2 LVCMOS	4 diff pairs + 2 LVCMOS	4 diff pairs + 2 LVCMOS	4 diff pairs + 2 LVCMOS	4 diff pairs + 2 LVCMOS	1.8V~3.3V	-40°C~+85°C	样品申请

产品图片

型号

温度稳定度

温度范围

波形

秒稳

相噪TyP

封装(mm)

频率范围

规格书

样品申请